Cuprous selenide  Cu2Se
Available form
powder
Application field

 

Application Field
Cu2Se,
 
1, technical docking: purification of elemental copper, selenium (the process used is: anode mud enrichment, electrolysis, vacuum distillation, hydrogenation deoxidation, regional melting... - vacuum melting to synthesize 2 - yuan alloy.
 
2. Properties: black cubic crystal. Relative density 6.749. Melting point is 1113 ℃. A stoichiometric mixture of copper and selenium heated in a vacuum quartz seal tube or reduced by hydrazine hydrate in an ammonia solution of copper salt and selenite. Used as a semiconductor.
 
3. Physical properties: ingot, powder, pill, granule, needle, etc.
 
4. Purpose:
 
It is mainly used for the preparation of group compound semiconductor, cuprous selenide target material, copper indium gallium selenium thin film solar cell.
Product description
Describe
Molecular formula: Cu2Se
Technical docking: purification of elemental copper, selenium (the process used is: anode mud enrichment, electrolysis, vacuum distillation, hydrogenation deoxidation, regional smelting... - vacuum melting to synthesize 2 - yuan alloy.
Test: icp-ms; XRD. Laser particle size analyzer.
Service: provide practical protective measures and material application solutions.
(in particular, sputtering, printing process to prepare copper indium gallium selenium CIGS thin film)
Can provide technical docking
Properties: black cubic crystal. Relative density 6.749. Melting point is 1113 ℃. A stoichiometric mixture of copper and selenium heated in a vacuum quartz seal tube or reduced by hydrazine hydrate in an ammonia solution of copper salt and selenite. Used as a semiconductor.
2. Specifications:
Chemical purity:
High purity cuprous selenide -05 purity 99.999% above, silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, manganese, nickel, lead, tin, zinc impurity total content less than 10ppm;
Ultra-pure cuprous selenide -06 purity 99.9999% above, silver, aluminum, arsenic, gold, cadmium, chromium, copper, iron, magnesium, nickel, lead, zinc impurity total content less than 1ppm.
3. Physical properties: ingot, powder, pill, granule, needle, etc.
4. Purpose:
It is mainly used for the preparation of group compound semiconductor, cuprous selenide target material, copper indium gallium selenium thin film solar cell.
5. Packaging: vacuum packaging of plastic film after polyester film packaging
Other materials